TetraFET
D2007UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A
B
C
1
2
D
4
M
3
E
F
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 28V – 400MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
G
H
K
I
J
• SUITABLE FOR BROAD BAND APPLICATIONS
DRAIN
GATE
DA
PIN 1
PIN 3
SOURCE
SOURCE
PIN 2
PIN 4
• LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
•
VHF/UHF COMMUNICATIONS
from DC to 500 MHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
29W
65V
±20V
2A
–65 to 150°C
200°C
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/98
SEME-LAB [ SEME LAB ]
