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IRF230 参数 Datasheet PDF下载

IRF230图片预览
型号: IRF230
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型高压功率MOSFET [N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET]
分类和应用: 晶体晶体管开关脉冲高压局域网高电压电源
文件页数/大小: 2 页 / 26 K
品牌: SEME-LAB [ SEME LAB ]
 浏览型号IRF230的Datasheet PDF文件第2页  
IRF230
TO–3 (TO–204AA) Package Outline.
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
1.52 (0.06)
3.43 (0.135)
6.35 (0.25)
9.15 (0.36)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFET
22.23
(0.875)
max.
38.61 (1.52)
39.12 (1.54)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
Pin 1 – Gate
Pin 2 – Source
0.97 (0.060)
1.10 (0.043)
Case – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DS
V
DGR
I
D
I
D
I
DM
V
GS
P
D
I
LM
E
AS*
T
J
, T
STG
T
L
Drain – Source Voltage
1
Drain - Gate Voltage (R
GS
= 20K
W
)
1
Continuous Drain Current@ T
case
= 25°C
Continuous Drain Current@ T
case
= 100°C
Pulsed Drain Current
3
Gate – Source Voltage
Maximum Power Dissipation @ T
case
= 25°C
Derate Linearly
Inductive Current Clamped
Single Pulse Avalanche energy Rating
4
200
200
9.0
6.0
36
±20
75
0.6
36
150
–55 to 150
300
V
V
A
A
A
V
W
W/°C
A
mj
°C
°C
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
THERMAL CHARACTERISTICS
Characteristic
R
q
JC
R
q
CS
R
q
JA
NOTES
1 T
J
= +25°C to + 150°C
2 Pulse Test PUlse Width
#
300
m
s. Duty Cycle
#
2%
3 Repetitive Ration Pulse Width Limited by Maximum Junction Temperature.
4 V
DD
= 20V starting TJ = +25°C , L = 3.37mH, R
GS
= 50
W
, I
PEAK
= 9A
Junction to Case
Case to Sink (Mounting Surface flat, smooth and greased.
Junction to Ambient (Free air operation)
0.1
30
Min.
Typ.
Max. Unit
1.67
°C/W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
Prelim. 6/00