N-CHANNEL
POWER MOSFET
IRF330 / 2N6760
•
•
•
•
Power MOSFET Transistor
In A Hermetic Metal TO-3 Package
High Input Impedance / RDS(on) < 1.0
Designed For Switching, Power Supply,
Motor Control and Amplifier Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VDS
VGS
ID
ID
IDM
PD
EAS
IAR
dv/dt
TJ
Tstg
TL
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
(1)
Total Power Dissipation at
Tc = 25°C
Tc = 100°C
Tc = 25°C
Derate Above 25°C
Single Pulse Avalanche Energy
(2)
Avalanche Current
(1)
(3)
Peak Diode Recovery
Junction Temperature Range
Storage Temperature Range
Lead Temperature
(1.6mm (0.063”) from case for 10sec)
400V
±20V
5.5A
3.5A
22A
75W
0.6W/°C
1.7mJ
5.5A
4V/ns
-55 to +150°C
-55 to +150°C
300°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Max.
1.67
Units
°C/W
INTERNAL PACKAGE INDUCTANCE
Symbols
LS + LD
Parameters
Total Inductance
Typ.
6.1
Units
nH
Notes
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) @VDD = 50V, Peak IL = 5.5A, Starting TJ = 25°C
(3)
(4)
@ ISD
≤
5.5A, di/dt
≤
90A/µs, VDD
≤
BVDSS, TJ
≤
150°C, Suggested RG = 7.5Ω
Pulse Width
≤
300us,
δ ≤
2%
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 9142
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com