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IRF9530S 参数 Datasheet PDF下载

IRF9530S图片预览
型号: IRF9530S
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道功率MOSFET用于HI.REL应用 [P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS]
分类和应用: 晶体晶体管开关
文件页数/大小: 2 页 / 26 K
品牌: SEME-LAB [ SEME LAB ]
 浏览型号IRF9530S的Datasheet PDF文件第2页  
IRF9530SMD
MECHANICAL DATA
Dimensions in mm (inches)
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .6 0 (0 .1 4 2 )
M a x .
4 .1 4 (0 .1 6 3 )
3 .8 4 (0 .1 5 1 )
P–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
V
DSS
I
D(cont)
R
DS(on)
FEATURES

!
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
-100V
-8A
0.35
W
0 .7 6
(0 .0 3 0 )
m in .
9 .6 7 (0 .3 8 1 )
9 .3 8 (0 .3 6 9 )
1 1 .5 8 (0 .4 5 6 )
1 1 .2 8 (0 .4 4 4 )
1 6 .0 2 (0 .6 3 1 )
1 5 .7 3 (0 .6 1 9 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
• HERMETICALLY SEALED
• SIMPLE DRIVE REQUIREMENTS
SMD 1
Pad 1 – Gate
Pad 2 – Drain
Pad 3 – Source
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
GS
I
D
I
D
I
DM
P
D
T
J
, T
stg
R
q
JC
Gate – Source Voltage
Continuous Drain Current @ T
case
= 25°C
Continuous Drain Current @ T
case
= 100°C
Pulsed Drain Current
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
±20V
8A
5A
40A
45W
0.36W/°C
–55 to 150°C
2.8°C/W max.
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
Prelim. 07/00