2N7336
IRFG6110
MECHANICAL DATA
Dimensions in mm (inches)
14 LEAD DUAL IN LINE QUAD
N & P CHANNEL
POWER MOSFETS
BV
DSS
8
19.507 ± 0.432
(0.768 ± 0.017)
2.134
(0.084)
0.457 ± 0.102
(0.018 ± 0.004)
±100V
N-CHANNEL
P-CHANNEL
9.525 ± 0.635
(0.375 ± 0.025)
6.426 ± 0.305
(0.253 ± 0.012)
14
ID
(cont)
RDS
(on)
FEATURES
1A
Ω
0.7Ω
-0.75A
Ω
1.4Ω
1
7
• AVALANCHE ENERGY RATED
1.422 ± 0.102
(0.056 ± 0.004)
2.54
(0.100)
• HERMETICALLY SEALED
• DYNAMIC dv/dt RATING
• SIMPLE DRIVE REQUIREMENTS
• FOR AUTOMATIC INSERTION
N-CHANNEL P-CHANNEL N-CHANNEL P-CHANNEL
1—Drain 1
2—Source 1
3—Gate 1
5—Gate 2
6—Source 2
7—Drain 2
8—Drain 3
9—Source3
10—Gate 3
12—Gate 4
13—Source 4
14—Drain 4
• SIMPLE DRIVE REQUIREMENTS
• EASE OF PARALLELING
• 2 N-CHANNEL/2 P-CHANNEL
CO-PACKAGED HEXFETS
P-CHANNEL
±20V
-0.75A
-0.5A
-3A
1.4W
0.011W/°C
75mJ
-5.5V/ns
–55 to 150°C
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
N-CHANNEL
V
GS
I
D
I
D
I
DM
P
D
E
AS
dv/dt
T
J
, T
stg
R
θJC
R
θJCA
Gate – Source Voltage
Continuous Drain Current
(V
GS
= 10V , T
case
= 25°C)
Continuous Drain Current
(V
GS
= 10V , T
case
= 100°C)
Pulsed Drain Current
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Peak Diode Recovery
3
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction-to-Ambient
±20V
1.A
0.6A
4A
1.4W
0.011W/°C
75mJ
5.5V/ns
–55 to 150°C
6.25°C/W
175°C/W
Notes
1) Pulse Test: Pulse Width
≤
300µs,
δ ≤
2%
2) @ V
DD
= 25V , L
≥
112mH , R
G
= 25Ω , Peak I
L
= 1A , Starting T
J
= 25°C
3) @ I
SD
≤
1A , di/dt
≤
75A/µs , V
DD
≤
BV
DSS
, T
J
≤
150°C , Suggested R
G
= 24Ω
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
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