N-CHANNEL
POWER MOSFET
IRFM140 / 2N7218
•
Low RDS(on) MOSFET Transistor
In A Isolated Hermetic Metal Package
•
Designed For Switching, Power Supply,
Motor Control and Amplifier Applications
Screening Options Available
•
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VDS
VGS
ID
ID
IDM
PD
EAS
dv/dt
TJ
Tstg
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
(1)
Total Power Dissipation at
Tc = 25°C
Tc = 100°C
Tc = 25°C
Derate Above 25°C
Single Pulse Avalanche Energy
(2)
Peak Diode Recovery
(3)
Junction Temperature Range
Storage Temperature Range
100V
±20V
28A
20A
112A
100W
0.8W/°C
250mJ
5.5V/ns
-55 to +150°C
-55 to +150°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
1.25
Units
°C/W
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) @VDD = 25V, L
≥
470µH, Peak IL = 28A, Starting TJ = 25°C
(3)
(4)
@ ISD
≤
28A, di/dt
≤
170A/µs, VDD
≤
BVDSS, TJ
≤
150°C, Suggested RG = 9.1Ω
Pulse Width
≤
300us,
δ ≤
2%
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8085
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com
SEME-LAB [ SEME LAB ]
