欢迎访问ic37.com |
会员登录 免费注册
发布采购

IRFM350 参数 Datasheet PDF下载

IRFM350图片预览
型号: IRFM350
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道功率MOSFET [N-CHANNEL POWER MOSFET]
分类和应用:
文件页数/大小: 2 页 / 24 K
品牌: SEME-LAB [ SEME LAB ]
 浏览型号IRFM350的Datasheet PDF文件第2页  
IRFM350
MECHANICAL DATA
Dimensions in mm (inches)
13.59 (0.535)
13.84 (0.545)
3.53 (0.139)
Dia.
3.78 (0.149)
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
N–CHANNEL
POWER MOSFET
V
DSS
I
D(cont)
R
DS(on)
FEATURES
• N–CHANNEL MOSFET
• HIGH VOLTAGE
• INTEGRAL PROTECTION DIODE
• HERMETIC ISOLATED TO-254 PACKAGE
30.35 (1.195)
31.40 (1.235)
16.89 (0.665)
17.40 (0.685)
13.59 (0.535)
13.84 (0.545)
1
2
3
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
20.07 (0.790)
20.32 (0.800)
400V
14A
0.315
W
3.81 (0.150)
BSC
• CERAMIC SURFACE MOUNT PACKAGE
OPTION
TO–254AA – Isolated Metal Package
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise stated)
V
GS
I
D
I
DM
P
D
I
L
dv / dt
R
q
JC
R
q
JA
R
q
CS
T
J
, T
STG
T
L
1)
2)
Gate – Source Voltage
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Avalanche Current , Clamped
1
Peak Diode Recovery
2
Thermal Resistance Junction – Case
Thermal Resistance Junction – Ambient
Thermal Resistance Case – Sink
Operating Junction and Storage Temperature Range
Lead Temperature (1.6mm from case for 10s)
V
DD
= 50V , Starting T
J
= 25°C , L
³
1mH , R
G
= 25
W
, Peak I
L
= 27.4A
I
SD
£
27.4A , di/dt
£
190A /
m
S , V
DD
£
BV
DSS
, T
J
£
150°C , Suggested R
G
= 2.35
W
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
@ V
GS
= 10V , T
C
= 25°C
@ V
GS
= 10V , T
C
= 100°C
@ T
C
= 25°C
±20V
14A
9.0A
56A
150W
1.2W / °C
14A
4V / ns
0.83°C / W
48°C / W
0.21°C / W typ.
–55 to 150°C
300°C
Semelab plc.
Prelim. 05/00