IRFM450
MECHANICAL DATA
Dimensions in mm (inches)
13.59 (0.535)
13.84 (0.545)
3.53 (0.139)
Dia.
3.78 (0.149)
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
N–CHANNEL
POWER MOSFET
V
DSS
I
D(cont)
R
DS(on)
FEATURES
• HERMETICALLY SEALED ISOLATED
PACKAGE
• AVALANCHE ENERGY RATING
30.35 (1.195)
31.40 (1.235)
16.89 (0.665)
17.40 (0.685)
13.59 (0.535)
13.84 (0.545)
1
2
3
20.07 (0.790)
20.32 (0.800)
500V
12A
Ω
0.415Ω
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
• SIMPLE DRIVE REQUIREMENTS
3.81 (0.150)
BSC
TO–254AA – Metal Package
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
• ALSO AVAILABLE IN TO–220 METAL AND
SURFACE MOUNT PACKAGES
• EASE OF PARALLELING
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
GS
I
D
I
D
I
DM
P
D
E
AS
I
AR
E
AR
dv/dt
T
J
, T
stg
T
L
R
θJC
R
θCS
R
θJA
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Avalanche Current
1
Repetitive Avalanche Energy
1
Peak Diode Recovery
3
Operating and Storage Temperature Range
Lead Temperature measured
1/16
” (1.6mm) from case for 10 sec.
Thermal Resistance Junction to Case
Thermal Resistance Case to Sink (Typical)
Thermal Resistance Junction to Ambient
(V
GS
= 10V , T
case
= 25°C)
(V
GS
= 10V , T
case
= 100°C)
±20V
12A
8A
48A
150W
1.2W/°C
750mJ
12A
15mJ
3.5V/ns
–55 to 150°C
300°C
0.83°C/W
0.21°C/W
48°C/W
Notes
1) Repetitive Rating – Pulse width limited by Maximum Junction Temperature
2) @ V
DD
= 50V , L
≥
9.4mH , R
G
= 25Ω , Peak I
L
= 12A , Starting T
J
= 25°C
3) @ I
SD
≤
12A , di/dt
≤
130A/µs , V
DD
≤
BV
DSS
, T
J
≤
150°C , Suggested R
G
= 2.35Ω
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 10/95
SEME-LAB [ SEME LAB ]
