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VN10KE 参数 Datasheet PDF下载

VN10KE图片预览
型号: VN10KE
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型MOSFET [N-CHANNEL ENHANCEMENT MODE MOSFET]
分类和应用: 晶体晶体管开关
文件页数/大小: 3 页 / 185 K
品牌: SEME-LAB [ SEME LAB ]
 浏览型号VN10KE的Datasheet PDF文件第2页浏览型号VN10KE的Datasheet PDF文件第3页  
N-CHANNEL ENHANCEMENT
MODE MOSFET
VN10KE
Low RDS(on), VGS(th), CISS And Fast Switching Speeds
Hermetic TO-52 Metal package.
Ideally Suited For Power Supply Circuits, Switching And
Driver (Relay, Solenoid, Lamp etc..) Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VDS
VGS
ID
IDM
PD
TJ
Tstg
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Pulsed Drain Current
(1)
Total Power Dissipation at
Operating Temperature Range
Storage Temperature Range
TA = 25°C
TA = 100°C
TA = 25°C
Derate Above 25°C
60V
+15V, -0.3V
0.17A
0.11A
1.0A
312.5mW
2.5mW/°C
-55 to +150°C
-55 to +150°C
THERMAL PROPERTIES
Symbols
R
θJA
Parameters
Thermal Resistance, Junction To Ambient
Min.
Typ.
Max.
400
Units
°C/W
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8418
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com