Data Sheet No. 2N3735
Electrical Characteristics
T
C
= 25 C unless otherwise specified
o
OFF Characteristics
Collector-Base Breakdown Voltage
I
C
= 10 mA
Collector-Emitter Breakdown Voltage
I
C
= 10 µA
Emitter-Base Breakdown Voltage
I
E
= 10 µA
Collector-Base Cutoff Current
V
CB
= 30 V
Emitter-Base Cutoff Current
V
EB
= 4.0 V
Collector-Emitter Cutoff Current
V
CE
= 30 V, V
EB
= 2.0 V
V
CB
= 30 V, V
EB
= 2.0 V, T
A
= +150 C
o
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO1
I
EBO1
I
CEX1
I
CEX2
Min
40
75
5.0
---
---
---
---
Max
---
---
---
250
100
200
250
Unit
V
V
V
nA
nA
nA
µA
ON Characteristics
Forward Current Transfer Ratio
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 150 mA, V
CE
= 1.0 V (pulse test)
I
C
= 500 mA, V
CE
= 1.0 V (pulse test)
I
C
= 1.0 A, V
CE
= 1.5 V (pulse test)
I
C
= 1.5 A, V
CE
= 5.0 V (pulse test)
I
C
= 500 mA, V
CE
= 1.0 V (pulsed), T
A
= +150
o
C
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
V
CE(sat)1
V
CE(sat)2
V
CE(sat)3
V
CE(sat)4
V
BE(sat)1
V
BE(sat)2
V
BE(sat)3
V
BE(sat)4
Min
30
40
40
20
20
15
---
---
---
---
---
---
---
0.9
Max
---
---
140
80
---
---
0.2
0.3
0.9
0.30
0.8
1.0
1.2
1.4
Unit
---
---
---
---
---
---
V dc
V dc
V dc
V dc
V dc
V dc
V dc
V dc
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 150 mA, I
B
= 15 mA (pulse test)
I
C
= 500 mA, I
B
= 50 mA (pulse test)
I
C
= 1.0 A, I
B
= 100 mA (pulse test)
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 150 mA, I
B
= 15 mA (pulse test)
I
C
= 500 mA, I
B
= 50 mA (pulse test)
I
C
= 1.0 A, I
B
= 100 mA (pulse test)
Small Signal Characteristics
Forward Current Transfer Ratio
I
C
= 50 mA, V
CE
= 10 V, f = 100 MHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
EB
= 0.5 V, I
C
= 0, 100 kHz < f < 1 MHz
Delay Time
V
CC
= 30 V, V
BE
= 2 V, I
C
= 1 A, I
B1
= 100 mA
Symbol
|h
FE
|
C
OBO
C
IBO
t
d
t
r
t
off
Min
2.5
---
---
---
---
---
Max
6.0
9.0
80
8.0
40
60
Unit
---
pF
pF
ns
ns
ns
Rise Time
V
CC
= 30 V, V
BE
= 2 V, I
C
= 1 A, I
B1
= 100 mA
Turn-off Time
V
CC
= 30 V, V
BE
= 2 V, I
C
= 1 A, I
B1
= I
B2
= 100 mA
SEMICOA [ SEMICOA SEMICONDUCTOR ]
