2N3811L
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
h
FE3-1
/h
FE3-2
Base-Emitter Voltage
V
BE
|V
BE1
-V
BE2
|
1
|V
BE1
-V
BE2
|
2
|V
BE1
-V
BE2
|
3
V
BEsat1
V
BEsat2
V
CEsat1
V
CEsat2
Test Conditions
I
C
= 1
µA,
V
CE
= 5 Volts
I
C
= 10
µA,
V
CE
= 5 Volts
I
C
= 100
µA,
V
CE
= 5 Volts
I
C
= 1 mA, V
CE
= 5 Volts
I
C
= 10 mA, V
CE
= 5 Volts
I
C
= 100
µA,
V
CE
= 5 Volts
T
A
= -55°C
I
C
= 100
µA,
V
CE
= 5 Volts
V
CE
= 5 Volts, I
C
= 100
µA
V
CE
= 5 Volts, I
C
= 10
µA
V
CE
= 5 Volts, I
C
= 100
µA
V
CE
= 5 Volts, I
C
= 10 mA
I
C
= 100
µA,
I
B
= 10
µA
I
C
= 1 mA, I
B
= 100
µA
I
C
= 100
µA,
I
B
= 10
µA
I
C
= 1 mA, I
B
= 100
µA
Symbol
V
(BR)CEO
I
CBO1
I
CBO2
I
CBO3
I
EBO1
I
EBO2
Test Conditions
I
C
= 100
µA
V
CB
= 60 Volts
V
CB
= 50 Volts
V
CB
= 50 Volts, T
A
= 150°C
V
EB
= 5 Volts
V
EB
= 4 Volts
Min
60
10
10
10
10
10
Typ
Max
Units
Volts
µA
nA
µA
µA
nA
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
Min
75
225
300
300
250
100
0.9
Typ
Max
Units
DC Current Gain
900
900
1.0
0.7
5
3
5
0.7
0.8
0.20
0.25
Volts
mVolts
mVolts
mVolts
Volts
Volts
Base-Emitter Saturation Voltage
Collector-Emitter Saturation
Voltage
Copyright 2002
Rev. G
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
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