2N4261UB
Silicon PNP Transistor
D a ta S h e e t
Description
SEMICOA offers:
•
Screening and processing per MIL-PRF-19500
Appendix E
•
JAN level (2N4261UBJ)
•
JANTX level (2N4261UBJX)
•
JANTXV level (2N4261UBJV)
•
JANS level (2N4261UBJS)
•
QCI to the applicable level
•
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
•
Radiation testing (total dose) upon request
Applications
•
General purpose switching transistor
•
Low power
•
PNP silicon transistor
Features
•
•
•
•
Hermetically sealed Cersot ceramic
Also available in chip configuration
Chip geometry 0014
Reference document:
MIL-PRF-19500/511
Benefits
Please contact SEMICOA for special configurations
www.SEMICOA.com or (714) 979-1900
•
Qualification Levels: JAN, JANTX,
JANTXV and JANS
•
Radiation testing available
T
C
= 25°C unless otherwise specified
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25°C
Derate linearly above 25°C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
Rating
15
15
4.5
30
200
1.14
0.86
-65 to +200
Unit
Volts
Volts
Volts
mA
mW
mW/°C
°C/mW
°C
R
θJA
T
J
T
STG
Copyright© 2005
Rev. E
SEMICOA
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
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