2N4957
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
Test Conditions
I
C
= 0.5 mA, V
CE
= 10 Volts
I
C
= 2 mA, V
CE
= 10 Volts
I
C
= 5 mA, V
CE
= 10 Volts
I
C
= 5 mA, V
CE
= 10 Volts
T
A
= -55°C
Symbol
V
(BR)CEO
I
CBO1
I
CBO2
I
CBO3
I
EBO1
Test Conditions
I
C
= 1 mA
V
CB
= 20 Volts
V
CB
= 30 Volts
V
CB
= 20 Volts, T
A
= 150°C
V
EB
= 3 Volts
Min
30
100
100
100
100
Typ
Max
Units
Volts
nA
µA
µA
µA
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
DC Current Gain
Min
15
20
30
10
Typ
Max
Units
165
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Common-Emitter small signal power
gain
Noise Figure
Collector Base time constant
Collector Base feedback capacitance
Symbol
|h
FE
|
G
PE
NF
r
b
’C
C
C
cb
Test Conditions
V
CE
= 10 Volts, I
C
= 2 mA,
f = 100 MHz
I
C
= 2 mA, V
CE
= 10 Volts,
f = 450 MHz
V
CE
= 10 Volts, I
C
= 2 mA,
f = 450 MHz, R
L
= 50
Ω
V
CB
= 10 Volts, I
E
= 2 mA,
f = 63.6 MHz
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
Min
12
17
Typ
Max
36
25
3.5
1
8
0.8
dB
dB
ps
pF
Units
Copyright 2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
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