HFB1N70
Jan 2007
BV
DSS
= 700 V
HFB1N70
700V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 4 5 nC (Typ )
4.5
(Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
: 10.3
Ω
(Typ.) @V
GS
=10V
100% Avalanche Tested
R
DS(on) typ
= 10.3
Ω
I
D
= 0.3 A
TO-92
1
3
1.Gate 2. Drain 3. Source
D
2
G
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source
Drain Source Voltage
Drain Current
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
T
C
=25℃ unless otherwise specified
Parameter
– Continuous (T
C
= 25℃)
– Continuous (T
C
= 100℃)
– Pulsed
(Note 1)
Value
700
0.3
0.18
1.2
±30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
33
0.3
03
0.25
4.5
2.5
0.02
-55 to +150
300
Power Dissipation (T
C
= 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance Characteristics
Symbol
R
θJL
R
θJA
Junction-to-Lead
Junction-to-Ambient
Junction to Ambient
Parameter
Typ.
--
--
Max.
50
140
℃/W
Units
◎ SEMIHOW REV.A0,Apr 2006
SEMIHOW [ SEMIHOW CO.,LTD. ]
