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HFS10N65S 参数 Datasheet PDF下载

HFS10N65S图片预览
型号: HFS10N65S
PDF下载: 下载PDF文件 查看货源
内容描述: 650V N沟道MOSFET [650V N-Channel MOSFET]
分类和应用:
文件页数/大小: 7 页 / 899 K
品牌: SEMIHOW [ SEMIHOW CO.,LTD. ]
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HFS10N65S
Sep 2009
BV
DSS
= 650 V
HFS10N65S
650V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 29 nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
: 0.83 Ω (Typ.) @V
GS
=10V
100% Avalanche Tested
R
DS(on) typ
= 0.83 Ω
I
D
= 9.2 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
T
C
=25℃ unless otherwise specified
Parameter
Value
650
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
– Continuous (T
C
= 25℃)
– Continuous (T
C
= 100℃)
– Pulsed
(Note 1)
9.2*
5.5*
36.8*
±30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
650
9.2
15.6
4.5
50
0.4
-55 to +150
300
Power Dissipation (T
C
= 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
*Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
Parameter
Typ.
--
--
Max.
2.5
62.5
Units
℃/W
SEMIHOW REV.A0,Sep 2009