HFS4N65
April 2006
BV
DSS
= 650 V
HFS4N65
650V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 15 nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
: 2.3 Ω (Typ.) @V
GS
=10V
100% Avalanche Tested
R
DS(on) typ
= 2.3 Ω
I
D
= 3.6* A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
T
C
=25℃ unless otherwise specified
Parameter
Value
650
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
– Continuous (T
C
= 25℃)
– Continuous (T
C
= 100℃)
– Pulsed
(Note 1)
3.6*
2.3*
14.4*
±30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
240
3.6
10
5.5
33
0.26
-55 to +150
300
Power Dissipation (T
C
= 25℃)
-
Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
Parameter
Typ.
--
--
Max.
3.79
62.5
℃/W
Units
◎
SEMIHOW REV.A0,April 2006
SEMIHOW [ SEMIHOW CO.,LTD. ]
