HFS640
Typical Characteristics
I
D
, Drain Current [A]
※
Notes
1. 250us Pulse Test
2. T
c
=25℃
I
D
, Drain Current [A]
V
GS
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
Bottom: 5.0V
Top:
※
Notes
1. V
DS
=40V
2. 250us Pulse Test
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
R
DS(ON)
[Ω],
Drain-Source On-Resistance
I
DR
, Reverse Drain Current [A]
※
Notes : T
J
=25℃
※
Notes
1. V
GS
=0V
2. 250us Pulse Test
I
D
, Drain Current [A]
V
SD
, Source-Drain Voltage [V]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
2500
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
C
iss
V
GS
, Gate-Source Voltage [V]
2000
10
V
DS
= 40V
V
DS
= 100V
V
DS
= 160V
Capacitances [pF]
8
1500
6
1000
C
oss
※
Note ;
1. V
GS
= 0 V
2. f = 1 MHz
4
500
C
rss
2
* Note : I
D
= 18.0 A
0
-1
10
10
0
10
1
0
0
8
16
24
32
40
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎
SEMIHOW REV.A0,Nov 2005
SEMIHOW [ SEMIHOW CO.,LTD. ]
