HFD3N80/HFU3N80
Dec 2005
BV
DSS
= 800 V
HFD3N80/HFU3N80
800V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 17 nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
: 4.0 Ω (Typ.) @V
GS
=10V
100% Avalanche Tested
R
DS(on) typ
= 4.0 Ω
I
D
= 2.5 A
D-PAK
2
1
1
3
2
3
I-PAK
HFD3N80
HFU3N80
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25℃) *
T
C
=25℃ unless otherwise specified
Parameter
Value
800
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
℃
℃
– Continuous (T
C
= 25℃)
– Continuous (T
C
= 100℃)
– Pulsed
(Note 1)
2.5
1.57
10
±30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
320
2.5
7.0
4.5
2.5
70
0.56
-55 to +150
300
Power Dissipation (T
C
= 25℃)
-
Derate above 25℃
T
J
, T
STG
T
L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient*
Junction-to-Ambient
Parameter
Typ.
--
--
--
Max.
1.78
50
110
℃/W
Units
* When mounted on the minimum pad size recommended (PCB Mount)
◎
SEMIHOW REV.A0,Dec 2005
SEMIHOW [ SEMIHOW CO.,LTD. ]
