Preliminary
HSB100-8
HSB100-8
Silicon Controlled Rectifier
V
DRM
= 600 V
I
T(RMS)
= 0.8A
Symbol
3.Anode
FEATURES
2.Gate
Repetitive Peak Off-State Voltage: 600V
R.M.S On-state Current (I
T(RMS)
=0.8A)
Average On-state Current (I
T(AV)
=0.5A)
Low On-State Voltage (1.2V
Typ
@I
TM
)
1.Cathode
1. K
2. G
3. A
3
2
1
General Description
PNPN Devices designed for high volume, line-powered consumer
applications such as relay and lamp driver, small motor controls, gate
drivers for larger thyristors and sensing and detection circuits. Supplied
in and inexpensive plastic TO-92 package which is readily adaptable for
use in automatic insertion equipment.
HSB100-8
Absolute Maximum Ratings
Symbol
V
DRM
I
T(RMS)
I
T(AV)
I
TSM
I
2
t
P
GM
P
G(AV)
V
RGM
I
FGM
T
STG
T
j
Parameter
Repetitive Peak Off-State Voltage
(
T
a
=25℃)
Value
600
0.8
0.5
10
0.415
0.1
0.01
5
1
-40 to +125
-40 to +125
Units
V
A
A
A
A
2
s
W
W
V
A
℃
℃
R.M.S On-State Current (All conduction angles)
Average On-State Current
(Half Sine Wave : T
C
=74℃)
Surge On-State Current
(1/2 Cycle, 60Hz, Peak, Non Repetitive)
Circuit Fusing Considerations (t=8.3mS)
Forward Peak Gate Power Dissipation (Ta=25℃)
Forward Average Gate Power Dissipation
(Ta=25℃, t=8.3mS)
Reverse Peak Gate Voltage
Forward Peak Gate Current
Storage Temperature Range
Operating Junction Temperature
◎ SEMIHOW REV.1.0 Jan 2007
SEMIHOW [ SEMIHOW CO.,LTD. ]
