(
Ta=25 )
℃
Electrical Characteristics
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
IGT
Gate Trigger Current V =6V, R =10
L
25
mA
V
Ω
D
V
GT
Gate Trigger Voltage V =6V, R =10
L
1.5
Ω
D
Non Trigger Gate
Volt age
T =125 , V =1/2V
DRM
V
GD
0.2
V
℃
j
D
Critical Rate of Rise of
(dv/dt)c Off-State Voltage at
Communication
T =125 , V =2/3V
DRM
℃
(di/dt)c=-4A/ms
j
D
10.0
V/uS
IH
HoldingCurrent
15.0
mA
mA
V
V =VDRM, Single Phase, Half Wave,
D
RepetitivePeakOff-
State Current
IDRM
2.0
T =125
j
℃
IT=6A, Inst, Measurement
V
TM
PeakOn-StateVoltage
1.65
Thermal Characteristics
Symbol
RTH(j-c)
Parameter
Test Conditions
Min
Typ
Max
Units
Thermal Resistance
Junction to Case
3.7
℃/ W
◎ SEMIHOW REV.1.0 Jan 2006