HTx4-600S
V
DRM
= 600 V
Symbol
2.T2
HTx4-600S
NON INSULATED TYPE
SENSITIVE GATE TRIAC
FEATURES
Repetitive Peak Off-State Voltage: 600V
R.M.S On-state Current (I
T(RMS)
=4A)
High Commutation dv/dt
Sensitive Gate Triggering 4 Mode
I
T(RMS)
= 4.0A
I
GT(MAX)
= 10mA
1.T1 2. T2 3. Gate
1.T1
3.Gate
HTP4-600S
HTC4-600S
HTM4-600S
General Description
The devices is sensitive gate TRIAC suitable for direct coupling to
TTL,HTL,CMOS and application such as various logic functions,
low power AC switching applications, such as fan speed, small light
controllers and home appliance equipment.
Absolute Maxim
um Ratings
Symbol
V
DRM
I
T(RMS)
I
TSM
V
GM
I
GM
P
G(AV)
P
GM
T
STG
T
j
(
T
a
=25℃)
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current (Ta = 95
℃
)
Surge On-State Current
(One Cycle, 50/60Hz, Peak, Non Repetitive)
Peak Gate V
oltage
Peak Gate Current
Average Gate Power Dissipation
Peak Gate Power Dissipation
Storage Temperature Range
Operating Temperature
V
alue
600
4
30/33
7
1
0.1
1.5
-40 to +125
-40 to +125
U
nits
V
A
A
V
A
W
W
℃
℃
◎ SEMIHOW REV.1.0 Jan 2006
SEMIHOW [ SEMIHOW CO.,LTD. ]
