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KSH13004A 参数 Datasheet PDF下载

KSH13004A图片预览
型号: KSH13004A
PDF下载: 下载PDF文件 查看货源
内容描述: 开关模式系列NPN硅功率晶体管 [Switch Mode series NPN silicon Power Transistor]
分类和应用: 晶体开关晶体管
文件页数/大小: 6 页 / 228 K
品牌: SEMIHOW [ SEMIHOW CO.,LTD. ]
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KSH13004A
0
KSH13004A
Switch Mode series NPN silicon Power Transistor
- High voltage, high speed power switching
- Suitable for switching regulator, inverters motor controls
4 Amperes
NPN Silicon Power Transistor
75 Watts
Absolute Maximum Ratings
CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter
Collector Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
TC=25℃ unless otherwise noted
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
RATING
600
300
9
4
8
2
75
150
-65~150
UNIT
V
V
V
A
A
A
W
TO-220
1. Base
2. Collector
3. Emitter
12
3
Electrical Characteristics
CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
TC=25℃ unless otherwise noted
SYMBOL
V
CEO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
Test Condition
I
C
=10mA, I
B
=0
V
EB
=9V,I
C
=0
V
CE
=5V,I
C
=1A
V
CE
=5V,I
C
=2A
I
C
=1A,I
B
=0.2A
I
C
=2A,I
B
=0.5A
I
C
=4A,I
B
=1A
I
C
=1A,I
B
=0.2A
I
C
=2A,I
B
=0.5A
V
CB
=10V, f=0.1MHz
Min
300
Typ.
Max
Unit
V
1
10
8
60
40
0.5
0.6
1
1.2
1.6
65
4
0.8
4.0
0.9
V
V
V
V
V
*Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn on Time
Storage Time
Fall Time
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
V
BE
(sat)
C
ob
f
T
t
on
t
stg
t
F
V
CE
=10V,I
C
=0.5A
Vcc=125V, Ic=2A
I
B1
=0.4A, I
B2
= -0.4A
R
L
=62.5Ω
Note.
R
hFE1
Classification
O
Y
19 ~ 28
26 ~ 35
33 ~ 40
Package Mark information.
S
YWW
Z
KSH13004A
S
YWW
Z
SemiHow Symbol
Y; year code, WW; week code
hFE1 Classification
◎ SEMIHOW REV.A1,Oct 2007