TIP100/101/102
Monolithic Construction With Built In
Base-Emitter Shunt Resistors
- High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.)
- Collector-Emitter Sustaining Voltage
- Low Collector-Emitter Saturation Voltage
- Industrial Use
NPN Epitaxial
Silicon Darlington
Transistor
- Complementary to TIP105/106/107
Equivalent Circuit
Absolute Maximum Ratings Ta=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
RATING
UNIT
Collector-Base Voltage : TIP100
VCBO
60
80
100
V
V
V
: TIP101
: TIP102
Collector-Emitter Voltage : TIP100
VCEO
60
80
100
V
V
V
: TIP101
: TIP102
TO-220
1. Base
2. Collector
3. Emitter
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Ta=25℃)
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
VEBO
IC
ICP
IB
PC
PC
TJ
5
8
15
1
2
V
A
A
A
W
W
℃
℃
80
150
-65~150
1
2
3
TSTG
Electrical Characteristics Ta=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Min
Max
Unit
Collector-Emitter Sustaining Voltage
VCEO(SUS)
: TIP100
: TIP101
: TIP102
60
80
100
V
V
V
IC=30mA, IB=0
Collector Cut-off Current
: TIP100
ICEO
VCE=30V,IB=0
50
50
50
㎂
㎂
㎂
: TIP101
: TIP102
V
V
CE=40V,IB=0
CE=50V,IB=0
Collector Cut-off Current
: TIP100
ICBO
VCE=60V,IE=0
50
50
50
㎂
㎂
㎂
: TIP101
: TIP102
V
V
CE=80V,IE=0
CE=100V,IE=0
Emitter Cut-off Current
DC Current Gain
IEBO
hFE
VEB=5V,IC=0
2
㎃
VCE=4V,IC=3A
1000
200
20000
V
CE=4V,IC=8A
Collector-Emitter Saturation Voltage
VCE(sat)
IC=3A,IB=6mA
IC=8A,IB=80mA
2
2.5
V
V
Base-Emitter ON Voltage
VBE(on)
Cob
VCE=4V,IC=8A
2.8
V
VCB=10V,IE=0, f=0.1MHz
Output Capacitance
200
㎊
* Pulse Test: PW≤300us, Duty Cycle≤2%
◎ SEMIHOW REV.A0,Oct 2007
SEMIHOW [ SEMIHOW CO.,LTD. ]
