TIP105/106/107
TIP105/106/107
Monolithic Construction With Built In
Base-Emitter Shunt Resistors
- High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.)
- Collector-Emitter Sustaining Voltage
- Low Collector-Emitter Saturation Voltage
- Industrial Use
- Complementary to TIP100/101/102
PNP Epitaxial
Silicon Darlington
Transistor
Equivalent Circuit
Absolute Maximum Ratings
CHARACTERISTICS
Collector-Base Voltage
: TIP105
: TIP106
: TIP107
T
a
=25℃ unless otherwise noted
SYMBOL
V
CBO
RATING
-60
-80
-100
-60
-80
-100
-5
-8
-15
-1
2
80
150
-65~150
UNIT
V
V
V
V
V
V
V
A
A
A
W
W
℃
℃
TO-220
1. Base
2. Collector
3. Emitter
Collector-Emitter Voltage : TIP105
: TIP106
: TIP107
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Ta=25℃)
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
12
3
Electrical Characteristics
CHARACTERISTICS
Collector-Emitter Sustaining Voltage
: TIP105
: TIP106
: TIP107
Collector Cut-off Current
: TIP105
: TIP106
: TIP107
Collector Cut-off Current
: TIP105
: TIP106
: TIP107
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Output Capacitance
T
a
=25℃ unless otherwise noted
SYMBOL
V
CEO
(SUS)
I
C
=30mA, I
B
=0
-60
-80
-100
-50
-50
-50
-50
-50
-50
-2
1000
200
20000
-2
-2.5
-2.8
300
V
V
V
㎊
V
V
V
㎂
㎂
㎂
㎂
㎂
㎂
㎃
Test Condition
Min
Max
Unit
I
CEO
V
CE
= -30V,I
B
=0
V
CE
= -40V,I
B
=0
V
CE
= -50V,I
B
=0
I
CBO
V
CE
= -60V,I
E
=0
V
CE
= -80V,I
E
=0
V
CE
= -100V,I
E
=0
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
C
ob
V
EB
= -5V,I
C
=0
V
CE
= -4V,I
C
= -3A
V
CE
= -4V,I
C
= -8A
I
C
= -3A,I
B
= -6mA
I
C
= -8A,I
B
= -80mA
V
CE
= -4V,I
C
= -8A
V
CB
= -10V,I
E
=0, f=0.1MHz
* Pulse Test: PW≤300us, Duty Cycle≤2%
◎
SEMIHOW REV.A0,Oct 2007
SEMIHOW [ SEMIHOW CO.,LTD. ]
