SAMWIN
SW10N65
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 8. On resistance variation
vs. junction temperature
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
*. Notes :
1. VGS = 10 V
0.9
0.8
*. Notes :
1. VGS = 0 V
2. ID = 5.0 A
2. ID = 250 uA
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Fig. 9. Maximum drain current vs.
case temperature.
Fig. 10. Maximum safe operating area
102
10
8
Operation in This Area
is Limited by R DS(on)
100 s
101
1 ms
10 ms
6
100
10-1
10-2
DC
4
*. Notes :
2
1. TC = 25 o
C
2. TJ = 150 o
C
3. Single Pulse
0
25
100
101
102
103
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC' Case Temperature [oC]
Fig. 11. Transient thermal response curve
100
D=0.5
*. Notes :
1. Z¥èJC(t) = 0.85oC/W Max.
0.2
2. Duty Factor, D=t1/t2
10-1
0.1
3. TJM - TC = PDM * Z¥èJC(t)
0.05
t1
t2
0.02
0.01
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
4/7
SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
