SAMWIN
SW19N10
N-channel MOSFET
Features
■
High ruggedness
■
R
DS(ON)
(Max 0.1Ω)@V
GS
=10V
■
Gate Charge (Typ 100nC)
■
Improved dv/dt Capability
■
100% Avalanche Tested
TO-220
TO-252
BV
DSS
: 100V
I
D
: 17A
R
DS(ON)
: 0.1 ohm
1
1
2
3
2
3
2
1. Gate 2. Drain 3. Source
1
General Description
This N-channel enhancement mode field-effect power transistor using SAMWIN
semiconductor’s advanced planar stripe, DMOS technology intended for battery
Operated systems like a DC-DC converter motor control , ups ,audio amplifier.
Also, especially designed to minimize R
DS(ON)
, low gate charge and high rugged
avalanche characteristics.
3
Order Codes
Item
1
2
Sales Type
SW P 19N10
SW D 19N10
Marking
SW19N10
SW19N10
Package
TO-220
TO-252
Packaging
TUBE
REEL
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG
, T
J
T
L
Drain to Source Voltage
Continuous Drain Current (@T
C
=25
o
C)
Continuous Drain Current (@T
C
=100
o
C)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@T
C
=25
o
C)
Derating Factor above 25
o
C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
(note 2)
(note 1)
(note 3)
(note 1)
Parameter
Value
100
17
11
68
±
25
215
7.5
6.0
62.5
0.5
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/
o
C
o
C
o
C
Thermal characteristics
Symbol
R
thjc
R
thcs
R
thja
Mar. 2011. Rev. 2.0
Parameter
Min.
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
Typ.
0.5
62.5
Max.
2.0
Unit
o
C/W
o
C/W
o
C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
1/7
SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
