SAMWIN
SW1N60L
N-channel MOSFET
Features
■
High ruggedness
■
R
DS(ON)
(Max 23
Ω)@V
GS
=10V
■
Gate Charge (Max 4.5nC)
■
Improved dv/dt Capability
■
100% Avalanche Tested
TO-92
BV
DSS
: 600V
I
D
: 0.3A
R
DS(ON)
: 23ohm
1
2
3
1
2
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics. This power MOSFET is usually used
at AC adaptors and SMPS.
3
Order Codes
Item
1
Sales Type
SW C 1N60L
Marking
SW1N60L
Package
TO-92
Packaging
TAPE
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG
, T
J
T
L
Drain to Source Voltage
Continuous Drain Current (@T
C
=25
o
C)
Continuous Drain Current (@T
C
=100
o
C)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@T
C
=25
o
C)
Derating Factor above 25
o
C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
(note 2)
(note 1)
(note 3)
(note 1)
Parameter
Value
600
0.3
0.18
1.2
±
30
33
0.3
4.5
1
0.02
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/
o
C
o
C
o
C
Thermal characteristics
Symbol
R
thCL
R
thjA
Parameter
Thermal resistance, Junction to Lead Max
Thermal resistance, Junction to ambient
Value
50
140
Unit
o
C/W
o
C/W
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
