SAMWIN
Fig. 1. On-state characteristics
V
GS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
SW1N70A
Fig. 2. Transfer characteristics
10
0
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10
0
10
-1
150 C
25 C
-55 C
※
Notes :
1. V
DS
= 50V
2. 250μs Pulse Test
o
o
o
※
Notes :
10
-2
1. 250μs Pulse Test
2. T
C
= 25
℃
10
-1
10
-1
10
0
10
1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Fig. 3. On-resistance variation vs.
drain current and gate voltage
50
Fig. 4. On state current vs.
diode forward voltage
Drain-Source On-Resistance [¥ط]
40
I
DR
, Reverse Drain Current [A]
10
0
30
R
DS(ON)
,
V
GS
= 10V
20
150،ة
25،ة
V
GS
= 20V
10
،ط Note : T
J
= 25،ة
،ط Notes :
1. V
GS
= 0V
2. 250¥ىs Pulse Test
0
0.0
10
-1
0.5
1.0
1.5
2.0
2.5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Fig. 5. Capacitance characteristics
(Non-Repetitive)
Fig. 6. Gate charge characteristics
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