SAMWIN
TO-251
TO-252
SW2N70
N-channel MOSFET
Features
■
High ruggedness
■
R
DS(ON)
(Max 7
Ω)@V
GS
=10V
■
Gate Charge (Max 5nC)
■
Improved dv/dt Capability
■
100% Avalanche Tested
BV
DSS
: 700V
I
D
: 2A
R
DS(ON)
: 7ohm
2
1
1
2
3
2
3
1. Gate 2. Drain 3. Source
1
3
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics. This power MOSFET is usually used
at AC adaptors and SMPS.
Order Codes
Item
1
2
Sales Type
SW I 2N70
SW D 2N70
Marking
SW2N70
SW2N70
Package
TO-251
TO-252
Packaging
TUBE
REEL
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG
, T
J
T
L
Drain to Source Voltage
Continuous Drain Current (@T
C
=25
o
C)
Continuous Drain Current (@T
C
=100
o
C)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@T
C
=25
o
C)
Derating Factor above 25
o
C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
(note 2)
(note 1)
(note 3)
(note 1)
Parameter
Value
700
2.0
1.3
8.0
±
30
140
2.8
4.5
28
0.22
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/
o
C
o
C
o
C
Thermal characteristics
Symbol
R
thCS
R
thjA
Parameter
Thermal resistance, Junction to Lead Max
Thermal resistance, Junction to ambient
Value
40
62.5
Unit
o
C/W
o
C/W
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
