SAMWIN
SW4N65
N-channel MOSFET
TO-220F
TO-220
BVDSS : 650V
Features
ID
: 4.0A
■ High ruggedness
RDS(ON) : 2.6ohm
■ RDS(ON) (Max 2.6 Ω)@VGS=10V
■ Gate Charge (Typ 18nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
1
1
2
2
2
3
3
1. Gate 2. Drain 3. Source
1
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
3
Order Codes
Item
1
Sales Type
SW P4N65
SW F 4N65
Marking
SW4N65
SW4N65
Package
TO-220
Packaging
TUBE
TUBE
2
TO-220F
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220
TO-220F
VDSS
ID
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
650
V
A
4.0
2.6
4.0*
2.5*
A
IDM
VGS
EAS
Drain current pulsed
(note 1)
16
A
Gate to Source Voltage
± 30
164
10.6
4.5
V
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 2)
(note 1)
(note 3)
mJ
mJ
V/ns
W
W/oC
oC
EAR
dv/dt
100
40*
PD
TSTG, TJ
TL
0.78
0.32
Operating Junction Temperature & Storage Temperature
-55 ~ + 150
300
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
Symbol
Parameter
Unit
TO-220
1.25
TO-220F
3.16
Rthjc
Rthcs
Rthja
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
oC/W
oC/W
oC/W
0.5
Thermal resistance, Junction to ambient
62.5
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
1/7
SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
