SAMWIN
Fig. 1. On-state characteristics
SW7N60A
Fig. 2. Transfer characteristics
Top :
V
GS
15.0V
10.0V
9.0V
8.0V
6.0V
5.0V
10
1
10
1
I
D
, Drain Current [A]
Bottom :
I
D
, Drain Current [A]
150 C
10
0
o
10
0
25 C
-55 C
*. Notes :
1. V
DS
= 50V
2. 250us Pulse Test
o
o
10
-1
*. Notes :
1. 250¥ىs Pulse Test
o
2. T
C
= 25 C
-1
0
1
10
-1
10
10
10
2
3
4
5
6
7
8
9
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Fig. 3. On-resistance variation vs.
drain current and gate voltage
2.5
Fig. 4. On state current vs.
diode forward voltage
Drain-Source On-Resistance [¥ط]
2.0
I
DR
, Reverse Drain Current [A]
10
1
1.5
V
GS
= 10V
150 C
o
R
DS(ON)
,
25 C
10
0
o
1.0
V
GS
= 20V
0.5
،ط Note : T
J
= 25 C
o
*. Notes :
1. V
GS
= 0V
2. 250us Pulse Test
0.0
0
5
10
15
20
25
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Fig. 5. Capacitance characteristics
(Non-Repetitive)
3000
2750
2500
C
iss
=C
gs
+C
gd
(C
ds
=shorted)
C
rss
=C
gd
*. Notes :
1. V
GS
= 0V
2. f=1MHz
Fig. 6. Gate charge characteristics
12
V
GS
, Gate-Source Voltage [V]
C
oss
=C
ds
+C
gd
V
DS
= 120V
10
Capacitance [pF]
2250
2000
1750
1500
1250
1000
750
500
250
0
5
10
15
20
25
30
V
DS
= 300V
V
DS
= 480V
C
iss
8
6
C
oss
4
C
rss
2
*. Note : I
D
= 8.0A
0
35
40
0
10
20
30
40
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
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SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
