SAMWIN
SW7N90
N-channel MOSFET
BV
DSS
: 900V
I
D
: 7.0A
R
DS(ON)
: 1.8ohm
1
2
2
Features
■
High ruggedness
■
R
DS(ON)
(Max 1.8
Ω)@V
GS
=10V
■
Gate Charge (Typ 26nC)
■
Improved dv/dt Capability
■
100% Avalanche Tested
TO-220F
3
1
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
3
Order Codes
Item
1
Sales Type
SW F 7N90
Marking
SW7N90
Package
TO-220F
Packaging
TUBE
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG
, T
J
T
L
Drain to Source Voltage
Continuous Drain Current (@T
C
=25
o
C)
Continuous Drain Current (@T
C
=100
o
C)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@T
C
=25
o
C)
Derating Factor above 25
o
C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
(note 2)
(note 1)
(note 3)
(note 1)
Parameter
Value
900
7.0
4.4
28
±
30
780
21
4.0
32
0.8
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/
o
C
o
C
o
C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R
thjc
R
thcs
R
thja
Mar. 2011. Rev. 2.0
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
3.87
0.5
62.5
Unit
o
C/W
o
C/W
o
C/W
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SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
