SAMWIN
Features
■
High ruggedness
■
R
DS(ON)
(Max 0.85Ω)@V
GS
=10V
■
Gate Charge (Typ 35nC)
■
Improved dv/dt Capability
■
100% Avalanche Tested
TO-220
SW840A
N-channel MOSFET
BV
DSS
: 500V
I
D
: 8.5A
R
DS(ON)
: 0.85ohm
1
2
2
3
1. Gate 2. Drain 3. Source
1
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as
fast switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. This power MOSFET is usually used at high efficient DC to
DC converter block, high efficiency switch mode power supplies, power factor
correction, electronic lamp ballast based on half bridge.
3
Order Codes
Item
1
Sales Type
SW P 840A
Marking
SW840A
Package
TO-220
Packaging
TUBE
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG
, T
J
T
L
Drain to Source Voltage
Continuous Drain Current (@T
C
=25
o
C)
Continuous Drain Current (@T
C
=100
o
C)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@T
C
=25
o
C)
Derating Factor above 25
o
C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
(note 2)
(note 1)
(note 3)
(note 1)
Parameter
Value
500
8.5
5.5
34
±
30
790
13.7
5.0
125
1.1
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/
o
C
o
C
o
C
Thermal characteristics
Symbol
R
thjc
R
thcs
R
thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
0.5
62.5
Value
Min.
Typ.
Max.
1.0
Unit
o
C/W
o
C/W
o
C/W
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
