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SWD100N03 参数 Datasheet PDF下载

SWD100N03图片预览
型号: SWD100N03
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道MOSFET [N-channel MOSFET]
分类和应用:
文件页数/大小: 5 页 / 509 K
品牌: SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
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SAMWIN
SW100N03
N-channel MOSFET
Features
High ruggedness
R
DS(ON)
(Max 5.3mΩ)@V
GS
=10V
Gate Charge (Typ 146nC)
Improved dv/dt Capability
100% Avalanche Tested
1
TO-220 TO-251
TO-252 TO-263
BV
DSS
: 30V
I
D
: 100A
R
DS(ON)
: 5.3 mΩ
1
2
3
2
3
1
2
1
3
2
2
3
1
3
1. Gate 2. Drain 3. Source
General Description
This N-channel enhancement mode field-effect power transistor using SAMWIN
semiconductor’s advanced planar stripe, DMOS technology intended for battery
Operated systems like a DC-DC converter motor control , ups ,audio amplifier.
Also, especially designed to minimize R
DS(ON)
, low gate charge and high rugged
avalanche characteristics.
Order Codes
Item
1
2
3
4
Sales Type
SW P 100N03
SW I 100N03
SW D 100N03
SW B 100N03
Marking
SW100N03
SW100N03
SW100N03
SW100N03
Package
TO-220
TO-251
TO-252
TO-263
Packaging
TUBE
TUBE
REEL
REEL
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
P
D
T
STG
, T
J
T
L
Drain to Source Voltage
Continuous Drain Current
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Total power dissipation (@T
C
=25
o
C)
Derating Factor above 25
o
C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
(note 2)
(note 1)
Parameter
Value
30
100
400
±
20
875
100
0.67
-55 ~ + 150
300
Unit
V
A
A
V
mJ
W
W/
o
C
o
C
o
C
Thermal characteristics
Symbol
R
thjc
R
thcs
R
thja
Parameter
Min.
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
0.5
62.5
Value
Typ.
Max.
1.5
o
C/W
o
C/W
o
C/W
Unit
Jun. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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