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SWD1N60 参数 Datasheet PDF下载

SWD1N60图片预览
型号: SWD1N60
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道MOSFET [N-channel MOSFET]
分类和应用:
文件页数/大小: 7 页 / 733 K
品牌: SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
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SAMWIN
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
1.2
SW1N60
Fig. 8. On resistance variation
vs. junction temperature
3.0
Drain-Source Breakdown Voltage
Drain-Source On-Resistance
2.5
1.1
R
DS(on)
, (Normalized)
BV
DSS
, (Normalized)
2.0
1.0
1.5
1.0
،ط Notes :
1. V
GS
= 10 V
2. I
D
= 0.5 A
0.9
،ط Notes :
1. V
GS
= 0 V
2. I
D
= 250 ¥ىA
0.5
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Fig. 9. Maximum drain current vs.
case temperature.
1.00
Fig. 10. Maximum safe operating area
10
1
Operation in This Area
is Limited by R
DS(on)
I
D'
Drain Current [A]
0.75
I
D
, Drain Current [A]
100
s
10
0
1 ms
10 ms
DC
0.50
10
-1
0.25
،ط Notes :
o
1. T
C
= 25 C
2. T
J
= 150 C
o
0.00
25
50
75
100
o
125
150
10
-2
3. Single Pulse
0
10
10
1
10
2
10
3
T
C'
Case Temperature [ C]
V
DS
, Drain-Source Voltage [V]
Fig. 11. Transient thermal response curve
10
1
Z
¥èJC
(t), Thermal Response
D=0.5
10
0
0.2
0.1
0.05
0.02
0.01
single pulse
،ط Notes :
1. Z
¥èJC
(t) = 4.2 ،ة/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
¥èJC
(t)
10
-1
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, Square Wave Pulse Duration [sec]
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