SAMWIN
Electrical characteristic
( T
C
= 25
o
C unless otherwise specified )
Symbol
Off characteristics
BV
DSS
ΔBV
DSS
/ ΔT
J
I
DSS
Drain to source breakdown voltage
Breakdown voltage temperature
coefficient
Drain to source leakage current
Gate to source leakage current, forward
I
GSS
Gate to source leakage current, reverse
V
GS
=0V, I
D
=250uA
I
D
=250uA, referenced to 25
o
C
V
DS
=650V, V
GS
=0V
V
DS
=520V, T
C
=125
o
C
V
GS
=30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
650
-
-
-
-
-
Parameter
Test conditions
Min.
SW4N65
Typ.
Max.
Unit
-
0.53
-
-
-
-
-
-
1
10
100
-100
V
V/
o
C
uA
uA
nA
nA
On characteristics
V
GS(TH)
R
DS(ON)
Gate threshold voltage
Drain to source on state resistance
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
= 2.0A
2.0
-
4.0
2.6
V
Ω
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
tr
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
Turn off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
=520V, V
GS
=10V, I
D
=4.0A
V
DS
=320V, I
D
=4.0A, R
G
=25Ω
V
GS
=0V, V
DS
=25V, f=1MHz
570
70
20
21
46
102
34
18.6
3.0
6.0
740
90
24
52
102
214
78
28
-
-
nC
ns
pF
Source to drain diode ratings characteristics
Symbol
I
S
I
SM
V
SD
T
rr
Q
rr
Parameter
Continuous source current
Pulsed source current
Diode forward voltage drop.
Reverse recovery time
Breakdown voltage temperature
Test conditions
Integral reverse p-n Junction
diode in the MOSFET
I
S
=4.0A, V
GS
=0V
I
S
=4.0A, V
GS
=0V,
dI
F
/dt=100A/us
Min.
-
-
-
-
-
Typ.
-
-
-
390
1.6
Max.
4
16
1.4
-
-
Unit
A
A
V
ns
uC
※.
Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 19mH, I
AS
= 4.0A, V
DD
= 50V, R
G
=25Ω, Starting T
J
= 25
o
C
3.
I
SD
≤ 4.0A, di/dt = 100A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
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