SAMWIN
SW10N60
N-channel MOSFET
BV
DSS
: 600V
I
D
: 10.0A
R
DS(ON)
: 0.75ohm
1
2
1
3
2
2
3
1
3
Features
■
High ruggedness
■
R
DS(ON)
(Max 0.75Ω)@V
GS
=10V
■
Gate Charge (Typ 37nC)
■
Improved dv/dt Capability
■
100% Avalanche Tested
TO-220F
TO-220
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. It is mainly suitable for half bridge or full bridge resonant topology
like a electronic ballast, and also low power switching mode power appliances.
Order Codes
Item
1
2
Sales Type
SW P 10N60
SW F 10N60
Marking
SW10N60
SW10N60
Package
TO-220
TO-220F
Packaging
TUBE
TUBE
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG
, T
J
T
L
Drain to Source Voltage
Continuous Drain Current (@T
C
=25
o
C)
Continuous Drain Current (@T
C
=100
o
C)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@T
C
=25
o
C)
Derating Factor above 25
o
C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
(note 2)
(note 1)
(note 3)
156
1.25
-55 ~ + 150
300
(note 1)
10.0
6.0
40
±
30
745
15.6
4.5
50*
0.4
Parameter
Value
TO-220
600
10.0*
6.0*
TO-220F
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/
o
C
o
C
o
C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R
thjc
R
thcs
R
thja
Mar. 2011. Rev. 2.0
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
TO-220
0.8
0.5
62.5
TO-220F
2.5
Unit
o
C/W
o
C/W
o
C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
