SAMWIN
SW3N80A
N-channel MOSFET
BV
DSS
: 800V
I
D
: 3.0A
R
DS(ON)
: 4.5ohm
1
2
1
1
2
3
2
3
1
3
2
Features
■
High ruggedness
■
R
DS(ON)
(Max 4.5
Ω)@V
GS
=10V
■
Gate Charge (Typ 26nC)
■
Improved dv/dt Capability
■
100% Avalanche Tested
TO-220F
TO-220
TO-252
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
Order Codes
Item
1
2
3
Sales Type
SW P 3N80A
SW F 3N80A
SW D 3N80A
Marking
SW3N80A
SW3N80A
SW3N80A
Package
TO-220
TO-220F
TO-252
Packaging
TUBE
TUBE
REEL
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG
, T
J
T
L
Drain to Source Voltage
Continuous Drain Current (@T
C
=25
o
C)
Continuous Drain Current (@T
C
=100
o
C)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@T
C
=25
o
C)
Derating Factor above 25
o
C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
(note 2)
(note 1)
(note 3)
106/39*
0.85/0.31
-55 ~ + 150
300
(note 1)
Parameter
Value
TO-220/TO-
TO-252
220F
800
3.0
1.9
12
±
30
310
10
4.5
54
0.43
3.0*
1.9*
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/
o
C
o
C
o
C
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
Symbol
R
thjc
R
thcs
R
thja
Jan. 2012. Rev. 3.0
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
TO-220/TO-220F
1.18/3.21
0.5/-
62.5
TO-252
2.31
-
100
Unit
o
C/W
o
C/W
o
C/W
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SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
