SAMWIN
TO-251
TO-252
SW226N
N-channel MOSFET
BV
DSS
: 600V
I
D
1
1 2
3
Features
■
High ruggedness
■
R
DS(ON)
(Max 2.3
Ω)@V
GS
=10V
■
Gate Charge (Typ 18nC)
■
Improved dv/dt Capability
■
100% Avalanche Tested
: 4.0A
R
DS(ON)
: 2.3ohm
2
3
2
1. Gate 2. Drain 3. Source
1
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
3
Order Codes
Item
1
2
Sales Type
SW I 226N
SW D 226N
Marking
SW226N
SW226N
Package
TO-251
TO-252
Packaging
TUBE
REEL
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG
, T
J
T
L
Drain to Source Voltage
Continuous Drain Current (@T
C
=25
o
C)
Continuous Drain Current (@T
C
=100
o
C)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@T
C
=25
o
C)
Derating Factor above 25
o
C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
(note 2)
(note 1)
(note 3)
(note 1)
Parameter
Value
600
4.0
2.2
16
±
30
220
10.6
4.5
54
0.43
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/
o
C
o
C
o
C
Thermal characteristics
Symbol
Parameter
Min.
R
thjc
R
thja
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
Value
Typ.
Max.
2.3
110
o
C/W
o
C/W
Unit
Mar. 2011. Rev. 2.0
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SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
