SAMWIN
SW640
N-channel MOSFET
Features
■
High ruggedness
■
R
DS(ON)
(Max 0.18
Ω)@V
GS
=10V
■
Gate Charge (Typ 20nC)
■
Improved dv/dt Capability
■
100% Avalanche Tested
TO-220
BV
DSS
: 200V
I
D
: 18A
R
DS(ON)
: 0.18ohm
1
2
3
2
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics. This power MOSFET is usually used
at high efficient DC to DC converter block and SMPS.
It’s typical application is TV and monitor.
1
3
Order Codes
Item
1
Sales Type
SW P 640
Marking
SW640
Package
TO-220
Packaging
TUBE
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG
, T
J
T
L
Drain to Source Voltage
Continuous Drain Current (@T
C
=25
o
C)
Continuous Drain Current (@T
C
=100
o
C)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@T
C
=25
o
C)
Derating Factor above 25
o
C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
(note 2)
(note 1)
(note 3)
(note 1)
Parameter
Value
200
18
11.4
72
±
30
250
13.9
5.5
139
1.1
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/
o
C
o
C
o
C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R
thjc
R
thcs
R
thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
TO-220
0.9
0.5
62.5
Unit
o
C/W
o
C/W
o
C/W
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
