SAMWIN
SW20N60
N-channel Power MOSFET
Features
■
High ruggedness MOSFET
■
R
DS(ON)
(Max 0.3Ω)@V
GS
=10V
■
Gate Charge (Max 80 nC)
■
Improved dv/dt Capability
■
100% Avalanche Tested
TO-3P
BV
DSS
: 600V
I
D
: 20A*
R
DS(ON)
: 0.3ohm
1
2
2
3
1
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as
fast switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. This power MOSFET is usually used at high efficient DC to
DC converter block, high efficiency switch mode power supplies, power factor
correction, electronic lamp ballast based on half bridge.
3
Order Codes
Item
1
Sales Type
SW W 20N60
Marking
SW20N60
Package
TO-3P
Packaging
TUBE
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG
, T
J
T
L
Drain to Source Voltage
Continuous Drain Current (@T
C
=25
o
C)
Continuous Drain Current (@T
C
=100
o
C)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@T
C
=25
o
C)
Derating Factor above 25
o
C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(note 2)
(note 1)
(note 3)
(note 1)
Parameter
SW20N60
600
20
14
80
±
30
1100
30
4.5
300
2.38
-55 ~ + 175
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/
o
C
o
C
o
C
Thermal characteristics
Symbol
R
thjc
R
thcs
R
thja
Parameter
Min.
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
0.24
40
Value
Typ.
Max.
0.42
o
C/W
o
C/W
o
C/W
Unit
Mar. 2011. Rev. 2.0
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SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
