Preliminary
SemiWell
Semiconductor
BT151F-600
Symbol
3. Gate
○
○
Silicon Controlled Rectifiers
Features
Repetitive Peak Off-State Voltage : 600V
◆
R.M.S On-State Current ( I
T(RMS)
= 12 A )
◆
Low On-State Voltage (1.4V(Typ.)@ I
TM
)
◆
Isolation Voltage ( V
ISO
= 1500V AC )
◆
▼
1
23
○
2. Anode
1. Cathode
TO-220F
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor con-
trol circuit in power tool, inrush current limit circuit and heating
control system.
Absolute Maximum Ratings
Symbol
V
DRM
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
di/dt
P
GM
P
G(AV)
I
FGM
V
RGM
V
ISO
T
J
T
STG
( T
J
= 25°C unless otherwise specified )
Condition
Ratings
600
Half Sine Wave : T
C
= 78 °C
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
7.6
12
120
72
50
5
Over any 20ms period
0.5
2
5
A.C. 1 minute
1500
- 40 ~ 125
- 40 ~ 150
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I
2
t
for Fusing
Critical rate of rise of on-state current
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Isolation Breakdown Voltage(R.M.S.)
Operating Junction Temperature
Storage Temperature
Units
V
A
A
A
A
2
s
A/
㎲
W
W
A
V
V
°C
°C
Oct, 2003. Rev. 0
1/5
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
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