SemiWell
Semiconductor
SBN13001
High Voltage Fast-Switching NPN Power Transistor
Features
-
Very High Switching Speed (Typical 120ns@100mA)
-
Minimum Lot-to-Lot hFE Variation
-
Low VCE(sat) (Typical 120mV@100mA/20mA)
-
Wide Reverse Bias S.O.A
Symbol
○
2.Collector
1.Base
○
○
3.Emitter
General Description
This device is designed for high voltage, high speed switching char-
acteristic required such as lighting system, switching regulator,
inverter and deflection circuit.
TO-92
1
2
3
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
STG
T
J
Parameter
Collector-Emitter Voltage ( V
BE
= 0 )
Collector-Emitter Voltage ( I
B
= 0 )
Emitter-Base Voltage ( I
C
= 0 )
Collector Current
Collector Peak Current ( t
P
＜
5 ms
)
Base Current
Base Peak Current ( t
P
＜
5 ms
)
Total Dissipation at T
A
= 25 °C
Storage Temperature
Max. Operating Junction Temperature
Value
700
400
8.0
0.2
0.4
0.1
0.2
750
- 65 ~ 150
150
Units
V
V
V
A
A
A
A
mW
°C
°C
Thermal Characteristics
Symbol
R
θJA
Parameter
Thermal Resistance, Junction-to-Ambient
Value
166
Units
°C/W
Oct, 2002. Rev. 1
Copyright@S emiWell S emiconduct or Co., Ltd., All rights reserved
1/4
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
