SemiWell
Semiconductor
SBN13003A
High Voltage Fast-Switching NPN Power Transistor
Features
- Very High Switching Speed (Typical 120ns@1.0A)
- Minimum Lot-to-Lot hFE Variation
- Low VCE(sat) (Typical 230mV@1.0A/0.25A)
- Wide Reverse Bias S.O.A
Symbol
○
2.Collector
3.Base
○
○
1.Emitter
General Description
This device is designed for high voltage, high speed switching char-
acteristic required such as lighting system, switching regulator,
inverter and deflection circuit.
TO-92
1
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
STG
T
J
2
3
Parameter
Collector-Emitter Voltage ( V
BE
= 0 )
Collector-Emitter Voltage ( I
B
= 0 )
Emitter-Base Voltage ( I
C
= 0 )
Collector Current
Collector Peak Current ( t
P
＜
5 ms
)
Base Current
Base Peak Current ( t
P
＜
5 ms
)
Total Dissipation at T
C
= 25 °C
Storage Temperature
Max. Operating Junction Temperature
Value
700
400
9.0
1.5
3.0
0.75
1.5
1.1
- 65 ~ 150
150
Units
V
V
V
A
A
A
A
W
°C
°C
Thermal Characteristics
Symbol
R
θJA
Parameter
Thermal Resistance, Junction-to-Ambient
Value
113.6
Units
°C/W
Mar, 2003. Rev. 3
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved
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