SemiWell
Semiconductor
SBW13009-O
High Voltage Fast-Switching NPN Power Transistor
Features
- Very High Switching Speed
- Minimum Lot-to-Lot hFE Variation
- Wide Reverse Bias S.O.A
Symbol
○
2.Collector
1.Base
○
○
3.Emitter
General Description
This device is designed for high voltage, high speed switching char-
acteristic required such as lighting system, switching mode power
supply.
TO-3P
1
2
3
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BM
P
C
T
STG
T
J
Parameter
Collector-Emitter Voltage ( V
BE
= 0 )
Collector-Emitter Voltage ( I
B
= 0 )
Emitter-Base Voltage ( I
C
= 0 )
Collector Current
Collector Pulse Current
Base Current
Base Peak Current ( t
P
＜
5 ms
)
Total Dissipation at T
C
= 25 °C
Storage Temperature
Max. Operating Junction Temperature
Value
700
400
9.0
12.0
24.0
6.0
12.0
130
- 65 ~ 150
150
Units
V
V
V
A
A
A
A
W
°C
°C
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
1.67
62.5
Units
°C/W
°C/W
Jul, 2006. Rev. 0
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