Preliminary
SemiWell
Semiconductor
SCD4C60S
Symbol
3. Gate
○
Silicon Controlled Rectifiers
Features
◆
◆
◆
○
▼
1
2
3
○
2. Anode
1. Cathode
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
T(RMS)
= 4 A )
Low On-State Voltage (1.6V(Typ.) @ I
TM
)
D-PAK
General Description
Standard gate triggering SCR is suitable for the application
where requiring high bidirectional blocking voltage capability
and also suitable for over voltage protection ,motor control cir-
cuit in power tool,inrush current limit circuit and heating control
system.
Absolute Maximum Ratings
Symbol
V
DRM
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
di/dt
P
GM
P
G(AV)
I
FGM
V
RGM
T
J
T
STG
( T
J
= 25°C unless otherwise specified )
Condition
Ratings
600
Half Sine Wave : T
C
=106 °C
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
2
4
33
21
50
0.5
0.1
0.3
6.0
- 40 ~ 125
- 40 ~ 125
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I
2
t
for Fusing
Critical rate of rise of on-state current
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Units
V
A
A
A
A
2
s
A/
㎲
W
W
A
V
°C
°C
Oct, 2005.
1/2
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
