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SFD2N60 参数 Datasheet PDF下载

SFD2N60图片预览
型号: SFD2N60
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道MOSFET [N-Channel MOSFET]
分类和应用:
文件页数/大小: 8 页 / 710 K
品牌: SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
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SemiWell
Semiconductor
SFD/U2N60
N-Channel MOSFET
Features
R
DS(on)
(Max 5.0
)@V
GS
=10V
Gate Charge (Typical 9.5nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
Symbol
2. Drain
1. Gate
3. Source
General Description
This Power MOSFET is produced using Semiwell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
D-PAK, I-PAK
2
1
3
1
2
3
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG,
T
J
T
L
Drain to Source Voltage
Continuous Drain Current(@T
C
= 25
°C)
Continuous Drain Current(@T
C
= 100
°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@T
C
= 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 2)
(Note 1)
(Note 3)
(Note 1)
Parameter
Value
600
1.8
1.1
6.0
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
±
30
120
4.4
4.5
44
0.35
- 55 ~ 150
300
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
Value
Min.
-
-
-
Typ.
-
-
-
Max.
2.87
50
110
Units
°C/W
°C/W
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
Copyright@Semiwell Semiconductor Inc., All rights reserved.