SFP45N03L
Fig 1. On-State Characteristics
V
GS
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
Top :
Fig 2. Transfer Characteristics
10
2
10
2
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10
1
10
1
175 C
25 C
-55 C
o
o
o
10
0
※
Notes :
1. 250µ s Pulse Test
2. T
C
= 25
℃
※
Notes :
1. V
DS
= 15V
2. 250µ s Pulse Test
10
-1
10
0
10
0
10
1
10
-1
0
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
50
Fig 4. On State Current vs.
Allowable Case Temperature
10
2
R
DS(ON)
,
Drain-Source On-Resistance[mΩ ]
V
GS
= 5V
30
I
DR
, Reverse Drain Current[A]
40
V
GS
= 10V
10
1
20
10
0
175
℃
25
℃
※
Notes :
1. V
GS
= 0V
2. 250µ s Pulse Test
10
※
Note : T
J
= 25
℃
0
0
50
100
150
200
250
300
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage[V]
Fig 5. Capacitance Characteristics
2500
C
iss
=C
gs
+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
Fig 6. Gate Charge Characteristics
12
V
GS
, Gate-Source Voltage [V]
2000
10
V
DS
= 15V
V
DS
= 24V
Capacitance [pF]
1500
※
Notes :
1. V
GS
= 0V
2. f=1MHz
8
6
1000
C
iss
C
oss
4
500
2
※
Note : I
D
= 45.0 A
C
rss
0
0
5
10
15
20
25
30
35
0
0
5
10
15
20
25
30
35
40
45
V
DS
, Drain-Source Voltage [V]
Q
g
, Total Gate Charge [nC]
3/7
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
