SFP730
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
1.2
3.0
Fig 8. On-Resistance Variation
vs. Junction Temperature
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
R
DS(on)
, (Normalized)
Drain-Source On-Resistance
2.5
1.1
2.0
1.0
1.5
1.0
※
Notes :
1. V
GS
= 10 V
2. I
D
= 6.5 A
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250 µ A
0.5
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Fig 9. Maximum Safe Operating Area
10
2
Fig 10. Maximum Drain Current
vs. Case Temperature
7
Operation in This Area
is Limited by R
DS(on)
6
I
D
, Drain Current [A]
10
1
1 ms
10 ms
DC
I
D
, Drain Current [A]
100
µ
s
5
4
3
2
1
0
25
10
0
※
Notes :
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
10
-1
10
-1
10
0
10
1
10
2
10
3
50
75
100
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [
℃
]
Fig 11. Transient Thermal Response Curve
Z
θ
JC
(t), Thermal Response
10
0
D = 0 .5
0 .2
0 .1
10
-1
※
N o te s :
1 . Z
θ
J C
= 1 .2 8
℃
/W M a x .
(t)
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
t)
(
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
4/7
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
