SemiWell
Semiconductor
SFP740
N-Channel MOSFET
Features
◆
◆
◆
◆
R
DS(ON)
Max 0.55 ohm at V
GS
= 10V
Gate Charge ( Typical 46nC)
Improve dv/dt capability, Fast switching
100% avalanche Tested
General Description
This MOSFET is produced using advanced planar strip
DMOS
technology.
This
latest
technology
has
been
especially designed to minimize on-state resistance have a
high rugged avalanche characteristics. These device are well
suited for half bridge and full bridge resonant topology like to
electronic lamp ballast.
Absolute Maximum Ratings (T
J
= 25℃
unless otherwise specified)
Symbol
V
DSS
I
D
Drain-Source Voltage
Drain Current
T
C
=25℃
Parameter
Ratings
400
10
Units
V
A
T
C
=100℃
V
GSS
I
DM
E
AS
E
AR
dv/dt
P
D
T
j
, T
STG
Gate-Source Voltage
Drain Current
pulse
(Note 1)
(Note 2)
(Note 1)
(Note 3)
6.3
±
30
40
680
12.5
5.0
125
-45 ~ 150
V
A
mJ
mJ
V/ns
W
℃
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Power Dissipation T
C
=25℃
Operation and Storage Temperature range
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